AMMC – 6408 PDF

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In a finalized package form, Vd1 and Vd2 terminals are commonly connected to the Vdd terminal. Typical S22 over temperature Figure No ground wires are needed since ground connections are made with plated through-holes to the backside of the device. Small signal Gain of 18dB?

Data subject to change. There are three methods to calculate Vofs: The drain bias voltage range is 3 to 5V.

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The bonding diagram for the recommended assembly is shown in Figure The drift error will be less than 0. These ratings apply to each ammmc FET 5. Minor improvements in performance are possible depending on the application. Vofs can be measured before each detector measurement by removing or switching off the power source and measuring Vref – Vdet. Muting can be accomplished by setting Vgg to the pinch-off voltage Vp.

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Electro Discharge Damage and Control.

An optional output power detector network is ammf provided. Wide Frequency Range GHz? Negative supply is used for the DC gate biasing. Typical Gain and Reverse Isolation Figure 2. For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels.

Broadband Wireless Access including Typical IM3 level and Ids vs.

AMMC-6408 Datasheet PDF

Integrated RF power detector? Junction operating temperature will directly affect the device MTTF. Frequency range 6 to 18 GHz? This data represents package part performances, and does not contain test fixture losses.

AMMC-6408 6-18 GHz 1W Power Amplifier

Combinations of supply voltage, drain current, input power, and output power shall not exceed PD. Observe Precautions for handling electrostatic sensitive devices.

This final package part performance is verified by a functional test correlated to actual performance at one or more frequencies 9. A single DC gate supply connected to Vg will bias all gain stages.

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This method gives an error due to temperature drift of less than 0. Vofs can be measured at a single reference temperature. Typical S11 over temperature Figure Typical ESD diode current versus diode voltage for connected diodes in series Figure Vofs can either be characterized over temperature and stored in a lookup table, or it can be measured at two temperatures and a linear fit used to calculate Vofs at any temperature. Typical IM3 level vs. A typical measured detector voltage versus output power at 18GHz is shown Figure Typical ESD diode current versus diode voltage for connected diodes in series is shown in Figure This method gives an error close to the method 1.

Input port partially matched For narrowband applications, customer may obtain optimum matching and gain with an additional matching circuit?

Operation in excess of any one of these conditions may result in permanent damage to this device.