K9F2G08U0M datasheet, K9F2G08U0M pdf, K9F2G08U0M data sheet, datasheet, data sheet, pdf, Samsung Electronic, FLASH MEMORY. K9F2G08U0M Datasheet PDF Download – FLASH MEMORY, K9F2G08U0M data sheet. The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications.

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This k9f2g0u0m sequence of setup followed by execution command ensures that memory contents are not accidentally erased due to external noise conditions. C Vcc Vss N. This operation is also initiated by writing 00hh to the command register along with five address cycles. Refer to table 3 for device status after reset operation. Random data input may be operated multiple times regardless of how many times it is done in a page.

Total 1, NAND cells reside in a block. Only the Read Status command and Reset command are valid while programming is in progress. An invalid block s does not affect the performance of valid block s because it is isolated from the bit line and the common source line by a select transistor.

Refer to 9kf2g08u0m qualification report for the actual data. Block address loading is accomplished in three cycles initiated by an Erase Setup command 60h. Random data output can be operated multiple times regardless of how many times it is done in a page. The contents of memory cells being altered are no longer valid, as the data will be partially programmed or erased.


For this reason, two bit ECC is recommended for copy-back operation. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

It returns to high when the internal controller has finished the operation.


Writing 10h alone without previously entering the serial data will not initiate the programming process. Those are latched on the rising edge of WE. In Block Erase operation, however, only the three row address cycles are used. To improve the efficiency of memory space, it is recommended that the read or verification failure due to single bit error be reclaimed by ECC without any block replacement. Please create an account or Sign in.

The program and read operations are executed on a page basis, while the erase operation is executed on a block basis. Minimum DC voltage is The program performance may be dramatically improved by cache program when there are lots of pages of data to be programmed.

A block consists of two NAND structured strings. The device may output random data in a page instead of the consecutive sequential data by writing random data output command. In addition to the enhanced architecture and interface, the device incorporates copy-back program feature from one page to another page without need for transporting the data to and from the external buffer memory. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data.


Added addressing method for program operation 0.

K9F2G08U0M datasheet, Pinout ,application circuits M X 8 Bit / M X 16 Bit NAND Flash Memory

When the device is in the Busy state, CE high is ignored, and the device does not return to standby mode in program or erase operation. The operation for performing a copy-back program is a sequential execution of page-read without serial access and copying-program with the address of destination page.

Since programming the last page does not employ caching, the program time has to be that of Page Program. Serial access may be done after power-on without latency.

Month Sales Transactions. The K9F2GXXX0M is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility. The internal write verify detects only errors for “1”s that are not successfully programmed to “0”s.

An internal voltage detector disables all functions whenever Vcc is below about 1.